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This paper introduces a static multi-level memory cell that was conceived to store state variables in neuromorphic onchip learning applications. It consists of a capacitance that ...
In this paper, for the first time, we analyze non-quasistatic (NQS) effects during single-event upsets (SEUs) in deep-submicron (DSM) MOS devices, using extensive 2D device, BSIM...
Palkesh Jain, D. Vinay Kumar, J. M. Vasi, Mahesh B...
This paper shows how lasers can be used to implement modification attacks on EEPROM and Flash memory devices. This was achieved with inexpensive laser-diode module mounted on a mic...