ICCAD
2004
IEEE
14 years 8 months ago
2004
IEEE
In this paper, we have analyzed ond modeled the fiilure probabilities ofSRAM cells due to process parameter variations. A method to predict the yield of a memoiy chip based on the...
DAC
2008
ACM
15 years 17 days ago
2008
ACM
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...