Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25

• Type: Journal
• Year: 2006
• Where: MR
• Authors: Cora Salm, André J. Hof, Fred G. Kuper, Jurriaan Schmitz
• Keywords: Hot Carrier, Hot Carrier Hardness, MR 2006, Robotics, Room Temperature