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2006

ESD robustness of thin-film devices with different layout structures in LTPS technology

13 years 10 months ago
ESD robustness of thin-film devices with different layout structures in LTPS technology
The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.
Chih-Kang Deng, Ming-Dou Ker
Added 14 Dec 2010
Updated 14 Dec 2010
Type Journal
Year 2006
Where MR
Authors Chih-Kang Deng, Ming-Dou Ker
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