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ISQED
2007
IEEE

Defect or Variation? Characterizing Standard Cell Behavior at 90nm and below

14 years 5 months ago
Defect or Variation? Characterizing Standard Cell Behavior at 90nm and below
Historically, design margin and defects have been viewed as different topics, one part of design and the other part of test. Shrinking process geometries are making the two part of a continuum. This paper discusses the leakage and delay behavior associated with classic resistive defects and compares it with transistor variation due to lithography.
Robert C. Aitken
Added 04 Jun 2010
Updated 04 Jun 2010
Type Conference
Year 2007
Where ISQED
Authors Robert C. Aitken
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