ESD robustness of thin-film devices with different layout structures in LTPS technology

The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.

• Type: Journal
• Year: 2006
• Where: MR
• Authors: Chih-Kang Deng, Ming-Dou Ker
• Keywords: LTPS Thin-film Devices, MR 2006, Robotics, Thin-film Devices, Thin-film Transistors