In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
Farshad Moradi, Dag T. Wisland, Snorre Aunet, Hami...
In this paper challenges observed in 65nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra lo...
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Al...
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering ...
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Yn...