As the process technology advances into the deep submicron era, interconnect plays a dominant role in determining circuit performance and signal integrity. Buffer insertion is one...
The electromagnetic interaction of on-chip antennas and metal interconnects modeled in a 250 nm complementary metal-oxide semiconductor (CMOS) technology is investigated. A finite...
The test signal method can be used to measure and model inductance parameters (self and mutual) of a very small interconnect especially in highdensity IC’s by using a test signa...
High frequency digital LSIs usually consist of many subcircuits coupled with multi-conductor interconnects embedded in the substrate. They sometimes cause serious problems of the ...
Capturing RLCK circuit responses accurately with existing model order reduction (MOR) techniques is very expensive. Direct metrics for fast analysis of RC circuits exist but there...