CMOS gates consume different amounts of power whether their output has a falling or a rising edge. Therefore the overall power consumption of a CMOS circuit leaks information about...
Sylvain Guilley, Philippe Hoogvorst, Renaud Pacale...
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
We have developed a system architecture, measuring and modeling techniques, and algorithms for on-line power and energy optimization and thermal management. The starting point for...
We present a novel detailed placement technique that accounts for systematic through-pitch variations to reduce leakage. Leakage depends nearly exponentially on linewidth (gate le...
Suppression of leakage current and reduction in device-todevice variability will be key challenges for sub-45nm CMOS technologies. Non-classical transistor structures such as the ...