As CMOS technology scales deeper into the nanometer regime, factors such as leakage power and chip temperature emerge as critically important concerns for VLSI design. This paper,...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
While some leakage power reduction techniques require modification of process technology achieving savings at the fabrication stage, others are based on circuit-level optimization...
David Duarte, Yuh-Fang Tsai, Narayanan Vijaykrishn...
— Reducing the ever-growing leakage power is critical to power efficient designs. Leakage reduction techniques such as power-gating using sleep transistor insertion introduces la...
Fei Li, Lei He, Joseph M. Basile, Rakesh J. Patel,...
With continued scaling into the sub-90nm regime, the role of process, voltage and temperature (PVT) variations on the performance of VLSI circuits has become extremely important. T...
Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatneka...