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DATE
2006
IEEE
142views Hardware» more  DATE 2006»
14 years 1 months ago
Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
GLVLSI
2009
IEEE
143views VLSI» more  GLVLSI 2009»
13 years 11 months ago
Unified P4 (power-performance-process-parasitic) fast optimization of a Nano-CMOS VCO
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...
Dhruva Ghai, Saraju P. Mohanty, Elias Kougianos
ISCAS
2007
IEEE
94views Hardware» more  ISCAS 2007»
14 years 1 months ago
Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....