41 search results - page 6 / 9 » Design of Reversible Quantum Ternary Comparator Circuits |
GLVLSI
1999
IEEE
13 years 11 months ago
1999
IEEE
Despite the seemingly endless upwards spiral of modern VLSI technology, many experts are predicting a hard wall for CMOS in about a decade. Given this, researchers continue to loo...
GLVLSI
2010
IEEE
13 years 11 months ago
2010
IEEE
Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high Ion/Ioff, and potential for l...
DAC
2008
ACM
13 years 8 months ago
2008
ACM
Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale proc...
ISCAS
2008
IEEE
14 years 1 months ago
2008
IEEE
— This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell employs a pair of differential MT...
DAC
2004
ACM
14 years 7 months ago
2004
ACM
We present a method for designing operational amplifiers using reversed geometric programming, which is an extension of geometric programming that allows both convex and non-conve...