Gain cell embedded DRAMs are twice as dense as 6T SRAMs, are logic compatible, have decoupled read and write paths providing good low voltage margin, and can drive long bitlines w...
— Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells in standby mode reduces the leakage curren...
This paper proposes a 0.5V / 100MHz / sub-5mW-operated 1-Mbit SRAM cell architecture which uses an overVCC grounded data storage (OVGS) scheme. The key target of OVGS is to minimi...
— The need to perform power analysis in the early stages of the design process has become critical as power has become a major design constraint. Embedded and highperformance mic...
Testing data retention faults (DRFs), particularly in integrated systems on chip comprised of very large number of various sizes and types of embedded SRAMs is challenging and typ...