172 search results - page 15 / 35 » FinFET-based SRAM design |
ISCAS
2003
IEEE
14 years 23 days ago
2003
IEEE
ABSTRACT: An active leakage-injection scheme (ALIS) for lowvoltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a commond...
VLSID
2009
IEEE
14 years 8 months ago
2009
IEEE
We propose a novel dependable SRAM with 7T cells and their array structure that avoids a half-selection problem. In addition, we introduce a new concept, "quality of a bit (Q...
DATE
2006
IEEE
14 years 1 months ago
2006
IEEE
Static Linked Faults are considered an interesting class of memory faults. Their capability of influencing the behavior of other faults causes the hiding of the fault effect and m...
ICCAD
2008
IEEE
14 years 4 months ago
2008
IEEE
— With process variation becoming a growing concern in deep submicron technologies, the ability to efficiently obtain an accurate estimate of failure probability of SRAM compone...
SOCC
2008
IEEE
14 years 1 months ago
2008
IEEE
— Several design metrics have been used in the past to evaluate the SRAM cell stability. However, most of them fail to provide the exact stability figures as shown in this paper...