172 search results - page 5 / 35 » FinFET-based SRAM design |
ISPD
2012
ACM
12 years 3 months ago
2012
ACM
Importance sampling is a popular approach to estimate rare event failures of SRAM cells. We propose to improve importance sampling by probability collectives. First, we use “Kul...
VLSI
2005
Springer
14 years 1 months ago
2005
Springer
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption a...
ICCAD
2009
IEEE
13 years 5 months ago
2009
IEEE
SRAM cell design is driven by the need to satisfy static noise margin, write margin and read current margin (RCM) over all cells in the array in an energy-efficient manner. These ...
ICCAD
2010
IEEE
13 years 4 months ago
2010
IEEE
Coarse-grain multi-threshold CMOS (MTCMOS) is an effective power-gating technique to reduce IC's leakage power consumption by turning off idle devices with MTCMOS power switc...
JCP
2008
13 years 7 months ago
2008
Instability of SRAM memory cells derived from the process variation and lowered supply voltage has recently been posing significant design challenges for low power SoCs. This paper...