268 search results - page 31 / 54 » Gating currents |
ISVLSI
2005
IEEE
14 years 1 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
FPL
1995
Springer
13 years 11 months ago
1995
Springer
Although the energy required to perform a logic operation has continuously dropped at least by ten orders of magnitude since early vacuumtube electronics [1], the increasing clock ...
ISCAS
2006
IEEE
14 years 1 months ago
2006
IEEE
Abstract— We present a simple silicon circuit for modelling voltagedependent ion channels found within neural cells, capturing both the gating particle’s sigmoidal activation (...
DATE
2007
IEEE
14 years 1 months ago
2007
IEEE
Characterizing setup/hold times of latches and registers, a crucial component for achieving timing closure of large digital designs, typically occupies months of computation in in...
ISCAS
2007
IEEE
14 years 1 months ago
2007
IEEE
— A procedure for synthesizing multiple-input translinear element (MITE) networks that implement a given system of translinear–loop equations (STLE) is presented. The minimum n...