This paper investigates read-out schemes for a crossbar memory using CNTFET-based elements as cross-points. Two read-out schemes are presented in this paper; the first scheme bias...
This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNTFETs) to design a technology library with ...
M. Haykel Ben Jamaa, Kartik Mohanram, Giovanni De ...
A new hybrid CMOS-nanoscale circuit style has been developed that uses only one type of Field Effect Transistor (FET) in the logic portions of a design. This is enabled by CMOS pro...
Pritish Narayanan, Michael Leuchtenburg, Teng Wang...