137 search results - page 3 / 28 » Minimizing power across multiple technology and design level... |
MICRO
2008
IEEE
14 years 1 months ago
2008
IEEE
— As semiconductor processing techniques continue to scale down, transient faults, also known as soft errors, are increasingly becoming a reliability threat to high-performance m...
ISVLSI
2005
IEEE
14 years 1 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
VLSID
2008
IEEE
14 years 1 months ago
2008
IEEE
With the shift towards deep sub-micron (DSM) technologies, the increase in leakage power and the adoption of poweraware design methodologies have resulted in potentially significa...
ICCAD
2001
IEEE
14 years 4 months ago
2001
IEEE
The use of nanometer technologies is making it increasingly important to consider transient characteristics of a circuit’s power dissipation (e.g., peak power, and power gradien...
CF
2005
ACM
13 years 9 months ago
2005
ACM
Power consumption within the memory hierarchy grows in importance as on-chip data caches occupy increasingly greater die area. Among dynamic power conservation schemes, horizontal...