We present simulations for ultra-thin body, fully-depleted, double-gate (DG) silicon-on-insulator (SOI) devices that can be readily optimized for both static power loss and perfor...
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...
Straining of silicon improves mobility of carriers resulting in speed enhancement for transistors in CMOS technology. Traditionally, silicon straining is applied in a similar ad-h...
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
As the operating supply voltage for commercial CMOS devices falls below 2 V, research activities are underway to develop CMOS integrated circuits that can operate at supply voltag...