The Multi-Threshold CMOS (MTCMOS) technology provides a solution to the high performance and low power design requirements of modern designs. While the low Vth transistors are use...
Hyo-Sig Won, Kyo-Sun Kim, Kwang-Ok Jeong, Ki-Tae P...
This paper proposes an efficient method to predict the worst case of voltage violation by multi-domain clock gating in a three-dimensional (3D) on-chip power network considering l...
—The very high levels of integration and submicron device sizes used in current and emerging VLSI technologies for FPGAs lead to higher occurrences of defects and operational fau...
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
Jing Li, Charles Augustine, Sayeef S. Salahuddin, ...
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory (NVM) technology that has the potential to replace the conventional on-chip SRAM caches for designing a more ...
Adwait Jog, Asit K. Mishra, Cong Xu, Yuan Xie, Vij...