97 search results - page 3 / 20 » SRAM Cell Current in Low Leakage Design |
JCP
2008
13 years 7 months ago
2008
Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a criti...
ISLPED
2005
ACM
14 years 1 months ago
2005
ACM
Intrinsic variations and challenging leakage control in today’s bulk-Si MOSFETs limit the scaling of SRAM. Design tradeoffs in six-transistor (6-T) and four-transistor (4-T) SRA...
ISLPED
2009
ACM
14 years 2 months ago
2009
ACM
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
ISCAS
2007
IEEE
14 years 2 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
VLSID
2009
IEEE
14 years 8 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...