Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. The first generation design was fabricated in a 0.35 µm SiGe Bi...
With the aggressive scaling of the CMOS technology parametric variation of the transistor threshold voltage causes significant spread in the circuit delay as well as leakage spect...
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
This paper presents a new power saving, high speed FPGA design enhancing a previous SiGe CML FPGA based on the Xilinx 6200 FPGA. The design aims at having a higher performance but...
Jong-Ru Guo, Chao You, Kuan Zhou, Bryan S. Goda, R...
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...