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GLVLSI
2006
IEEE
110views VLSI» more  GLVLSI 2006»
14 years 2 months ago
Synthesis of a wideband low noise amplifier
Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. The first generation design was fabricated in a 0.35 µm SiGe Bi...
Abhishek Jajoo, Michael Sperling, Tamal Mukherjee
IOLTS
2005
IEEE
141views Hardware» more  IOLTS 2005»
14 years 2 months ago
A Novel On-Chip Delay Measurement Hardware for Efficient Speed-Binning
With the aggressive scaling of the CMOS technology parametric variation of the transistor threshold voltage causes significant spread in the circuit delay as well as leakage spect...
Arijit Raychowdhury, Swaroop Ghosh, Kaushik Roy
VLSID
2006
IEEE
129views VLSI» more  VLSID 2006»
14 years 9 months ago
Modeling and Reduction of Gate Leakage during Behavioral Synthesis of NanoCMOS Circuits
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Saraju P. Mohanty, Elias Kougianos
FPGA
2003
ACM
167views FPGA» more  FPGA 2003»
14 years 1 months ago
A scalable 2 V, 20 GHz FPGA using SiGe HBT BiCMOS technology
This paper presents a new power saving, high speed FPGA design enhancing a previous SiGe CML FPGA based on the Xilinx 6200 FPGA. The design aims at having a higher performance but...
Jong-Ru Guo, Chao You, Kuan Zhou, Bryan S. Goda, R...
ISQED
2006
IEEE
109views Hardware» more  ISQED 2006»
14 years 2 months ago
Dual-K Versus Dual-T Technique for Gate Leakage Reduction : A Comparative Perspective
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...