Share of leakage in cache memories is increasing with technology scaling. Studies show that most stored bits in instruction caches are zero, and hence, asymmetric SRAM cells which...
We evaluate the leakage reduction for both instruction and data cache in presence of drowsy or decay techniques. We discovered that a filter cache, traditionally used for reducing...
Power leakage constitutes an increasing fraction of the total power consumption in modern semiconductor technologies. Recent research efforts have tried to integrate architecture...
Increasing source voltage (Source-Biasing) is an efficient technique for reducing gate and sub-threshold leakage of SRAM arrays. However, due to process variation, a higher source...
Swaroop Ghosh, Saibal Mukhopadhyay, Kee-Jong Kim, ...
Starting from the 90nm technology node, process induced stress has played a key role in the design of highperformance devices. The emergence of source/drain silicon germanium (S/D ...