35 search results - page 4 / 7 » An analytical model for negative bias temperature instabilit... |
DATE
2009
IEEE
14 years 2 months ago
2009
IEEE
Negative Bias Temperature Instability (NBTI), a PMOS aging phenomenon causing significant loss on circuit performance and lifetime, has become a critical challenge for temporal re...
ISLPED
2007
ACM
13 years 9 months ago
2007
ACM
Negative bias temperature instability (NBTI) has become a dominant reliability concern for nanoscale PMOS transistors. In this paper, we propose variable-latency adder (VL-adder) ...
GLVLSI
2008
IEEE
14 years 2 months ago
2008
IEEE
Reliability has become a practical concern in today’s VLSI design with advanced technologies. In-situ sensors have been proposed for reliability monitoring to provide advance wa...
DATE
2009
IEEE
14 years 2 months ago
2009
IEEE
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechanism for sub100nm VLSI designs. There is little research to quantify its impact o...
DATE
2010
IEEE
14 years 19 days ago
2010
IEEE
Abstract—Negative bias temperature instability (NBTI) significantly affects nanoscale integrated circuit performance and reliability. The degradation in threshold voltage (Vth) d...