Substantial increase in leakage current and threshold voltage fluctuations are making design of robust wide fan-in dynamic gates a challenging task. Traditionally, a PMOS keeper t...
Hamed F. Dadgour, Rajiv V. Joshi, Kaustav Banerjee
Power dissipation is quickly becoming one of the most important limiters in nanometer IC design for leakage increases exponentially as the technology scaling down. However, power ...
State-of-the-art technologies in very large scale integration (VLSI) allow for the realization of gates with varying energy consumptions and hence delays (i.e., processing speeds) ...
- A low overhead circuit technique is proposed in this paper for simultaneously reducing subthreshold and gate oxide leakage currents in domino logic circuits. PMOS sleep transisto...
Leakage current has become a stringent constraint in today’s processor designs in addition to traditional constraints on frequency. Since leakage current exhibits a strong inver...
Rajeev R. Rao, Anirudh Devgan, David Blaauw, Denni...