176 search results - page 14 / 36 » Beyond the conventional transistor |
ISQED
2009
IEEE
14 years 2 months ago
2009
IEEE
The advance in semiconductor technologies presents the serious problem of parameter variations. They affect threshold voltage of transistors and thus circuit delay has variability...
DATE
2009
IEEE
14 years 2 months ago
2009
IEEE
—The sustained push for performance, transistor count, and instruction level parallelism has reached a point where chip level power density issues are at the forefront of design ...
ISQED
2008
IEEE
14 years 1 months ago
2008
IEEE
The advance in semiconductor technologies presents the serious problem of parameter variations. They affect threshold voltage of transistors and thus circuit delay also has variat...
SOCC
2008
IEEE
14 years 1 months ago
2008
IEEE
In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be bia...
ISVLSI
2007
IEEE
14 years 1 months ago
2007
IEEE
As technology scales, more sophisticated fabrication processes cause variations in many different parameters in the device. These variations could severely affect the performance ...