4 search results - page 1 / 1 » Designing a fast and adaptive error correction scheme for in... |
VTS
2011
IEEE
12 years 10 months ago
2011
IEEE
This paper proposes an adaptive multi-bit error correcting code for phase change memories that provides a manifold increase in the lifetime of phase change memories thereby making...
HPCA
2011
IEEE
12 years 10 months ago
2011
IEEE
― Phase Change Memory (PCM) is one of the most promising technologies among emerging non-volatile memories. PCM stores data in crystalline and amorphous phases of the GST materia...
ISCA
2010
IEEE
13 years 11 months ago
2010
IEEE
As leakage and other charge storage limitations begin to impair the scalability of DRAM, non-volatile resistive memories are being developed as a potential replacement. Unfortunat...
MICRO
2009
IEEE
14 years 1 months ago
2009
IEEE
Voltage scaling is one of the most effective mechanisms to reduce microprocessor power consumption. However, the increased severity of manufacturing-induced parameter variations a...