268 search results - page 24 / 54 » Gating currents |
ICCAD
2002
IEEE
14 years 4 months ago
2002
IEEE
Approaches to achieve low-power and high-speed VLSI's are described with the emphasis on techniques across multiple technology and design levels. To suppress the leakage curr...
DFT
2009
IEEE
14 years 2 months ago
2009
IEEE
The temperature dependence of MOSFET drain current varies with supply voltage. Two distinct voltage regions exist—a normal dependence (ND) region where an increase in temperatur...
ASPDAC
2009
ACM
14 years 2 months ago
2009
ACM
In this paper, we present a novel statistical full-chip leakage power analysis method. The new method can provide a general framework to derive the full-chip leakage current or po...
ISCAS
2007
IEEE
14 years 1 months ago
2007
IEEE
– In the sub-65 nm CMOS technologies, subthreshold and gate dielectric leakage currents need to be simultaneously suppressed for effective energy reduction. New low-leakage circu...
STOC
1998
ACM
13 years 11 months ago
1998
ACM
Current formal models for quantum computation deal only with unitary gates operating on “pure quantum states”. In these models it is difficult or impossible to deal formally w...