14 search results - page 1 / 3 » Modeling and Reduction of Gate Leakage during Behavioral Syn... |
VLSID
2006
IEEE
14 years 11 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
ISCAS
2006
IEEE
14 years 4 months ago
2006
IEEE
In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simulta...
VLSID
2007
IEEE
14 years 11 months ago
2007
IEEE
We present minimization methodologies and an algorithm for simultaneous scheduling, binding, and allocation for the reduction of total power and power fluctuation during behaviora...
VLSID
2009
IEEE
14 years 11 months ago
2009
IEEE
: The challenges in nano-CMOS circuit design include the following: variability, leakage, power, thermals, reliability, and yield. This talk will focus on interdependent considerat...
ISQED
2008
IEEE
14 years 5 months ago
2008
IEEE
In this paper dual-K (DKCMOS) technology is proposed as a method for gate leakage power reduction. An integer linear programming (ILP) based algorithm is proposed for its optimiza...