SRAM design has been a major challenge for nanoscale manufacturing technology. We propose a new bit cell repair scheme for designing maximum-information memory system (MIMS). Unli...
This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enabl...
Due to shrinking technologies and increasing design sizes, it is becoming more difficult and expensive to distribute a global clock signal with low skew throughout a processor di...
— In three-dimensional (3D) chips, the amount of supply current per package pin is significantly more than in two-dimensional (2D) designs. Therefore, the power supply noise pro...
Pingqiang Zhou, Karthikk Sridharan, Sachin S. Sapa...
With the scaling of technology and the need for higher performance and more functionality, power dissipation is becoming a major bottleneck for microprocessor designs. Pipeline ba...
Hai Li, Swarup Bhunia, Yiran Chen, T. N. Vijaykuma...