SRAM design has been a major challenge for nanoscale manufacturing technology. We propose a new bit cell repair scheme for designing maximum-information memory system (MIMS). Unli...
With technology scaling down to 90nm and below, many yield-driven design and optimization methodologies have been proposed to cope with the prominent process variation and to incr...
Fang Gong, Hao Yu, Yiyu Shi, Daesoo Kim, Junyan Re...
—As device feature size continues to shrink, reliability becomes a severe issue due to process variation, particle-induced transient errors, and transistor wear-out/stress such a...
Jin Sun, Avinash Karanth Kodi, Ahmed Louri, Janet ...
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional...
Aggressive scaling of technology has an adverse impact on the reliability of VLSI circuits. Apart from increasing transient error susceptibility, the circuits also become more vul...