In this paper, we have analyzed ond modeled the fiilure probabilities ofSRAM cells due to process parameter variations. A method to predict the yield of a memoiy chip based on the...
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
Jing Li, Charles Augustine, Sayeef S. Salahuddin, ...
It is well known that SRAM constitutes a large portion of modern integrated circuits, with 80% or more of the total transistors being dedicated to SRAM in a typical processor or S...
Fadi J. Kurdahi, Ahmed M. Eltawil, Young-Hwan Park...
In this paper, we develop a method to analyze the probability of access failure in SRAM array (due to random Vt variation in transistors) by jointly considering variations in cell...
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
Andrew Carlson, Zheng Guo, Sriram Balasubramanian,...