Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption a...
A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nanoCMOS static random access memory (SRAM) is presented. A 45nm single-end...
Garima Thakral, Saraju P. Mohanty, Dhruva Ghai, Dh...
In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be bia...
This paper describes a novel memory hierarchy and line-pixel-lookahead (LPL) for an H.264/AVC video decoder. The memory system is the bottleneck of most video processors, particula...
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it i...