802 search results - page 6 / 161 » A comparative study of power efficient SRAM designs |
VLSID
2009
IEEE
14 years 8 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
ISCAS
2007
IEEE
14 years 1 months ago
2007
IEEE
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
MTDT
2006
IEEE
14 years 1 months ago
2006
IEEE
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby p...
SOCC
2008
IEEE
14 years 2 months ago
2008
IEEE
— Lowering supply voltage is an effective technique for power reduction in memory design, however traditional memory cell design fails to operate, as shown in [3], [10], at ultra...
DAC
2009
ACM
14 years 8 months ago
2009
ACM
In this paper, we compare embedded-DRAM (eDRAM) testing to both SRAM testing and commodity-DRAM testing, since an eDRAM macro uses DRAM cells with an SRAM interface. We first star...