The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in CMOS circuits as threshold voltage, channel length, and gate oxide thickne...
Amit Agarwal, Chris H. Kim, Saibal Mukhopadhyay, K...
Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power diss...
Mohab Anis, Mohamed Mahmoud, Mohamed I. Elmasry, S...
We present a novel technique to exploit the power-performance tradeoff. The technique can be used stand-alone or in conjunction with dynamic voltage scaling, the mainstream techn...
Leakage power is one of the most critical issues for ultra-deep submicron technology. Subthreshold leakage depends exponentially on linewidth, and consequently variation in linewi...
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...