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» Cell architecture for nanoelectronic design
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TVLSI
2010
13 years 2 months ago
SRAM Read/Write Margin Enhancements Using FinFETs
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
Andrew Carlson, Zheng Guo, Sriram Balasubramanian,...
DAC
1997
ACM
13 years 11 months ago
Developing a Concurrent Methodology for Standard-Cell Library Generation
Abstract - This paper describes the development of a concurrent methodology for standard cell library generation. Use of a novel physical design automation method enables a high de...
Donald G. Baltus, Thomas Varga, Robert C. Armstron...
ASPDAC
2000
ACM
104views Hardware» more  ASPDAC 2000»
13 years 12 months ago
Design of digital neural cell scheduler for intelligent IB-ATM switch
— We present the architecture of the ATM banyan switch composed of pattern process and high-speed digital neural cell scheduler. An input buffer type ATM switch with a window-bas...
J.-K. Lee, Seung-Min Lee, Mike Myung-Ok Lee, D.-W....
DAC
2007
ACM
14 years 8 months ago
Gate Sizing For Cell Library-Based Designs
With increasing time-to-market pressure and shortening semiconductor product cycles, more and more chips are being designed with library-based methodologies. In spite of this shif...
Shiyan Hu, Mahesh Ketkar, Jiang Hu
DAC
2010
ACM
13 years 11 months ago
SRAM-based NBTI/PBTI sensor system design
NBTI has been a major aging mechanism for advanced CMOS technology and PBTI is also looming as a big concern. This work first proposes a compact on-chip sensor design that tracks ...
Zhenyu Qi, Jiajing Wang, Adam C. Cabe, Stuart N. W...