We present a novel detailed placement technique that accounts for systematic through-pitch variations to reduce leakage. Leakage depends nearly exponentially on linewidth (gate le...
Increasing source voltage (Source-Biasing) is an efficient technique for reducing gate and sub-threshold leakage of SRAM arrays. However, due to process variation, a higher source...
Swaroop Ghosh, Saibal Mukhopadhyay, Kee-Jong Kim, ...
— Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells in standby mode reduces the leakage curren...
Rising interest in the applications of wireless sensor networks has spurred research in the development of computing systems for lowthroughput, energy-constrained applications. Un...
Abstract-This paper proposes the use of four-transistor (4T) cache and branch predictor array cell designs to address increasing worries regarding leakage power dissipation. While ...
Philo Juang, Phil Diodato, Stefanos Kaxiras, Kevin...