172 search results - page 16 / 35 » FinFET-based SRAM design |
ISCAS
2007
IEEE
14 years 1 months ago
2007
IEEE
— Due to continuous technology scaling, the reduction of nodal capacitances and the lowering of power supply voltages result in an ever decreasing minimal charge capable of upset...
VTS
2005
IEEE
14 years 1 months ago
2005
IEEE
Testing data retention faults (DRFs), particularly in integrated systems on chip comprised of very large number of various sizes and types of embedded SRAMs is challenging and typ...
DAC
2008
ACM
14 years 8 months ago
2008
ACM
1 Soft errors induced by radiation are an increasing problem in the microelectronic field. Although traditional models estimate the reliability of memories suffering Single Event U...
ISCAS
2007
IEEE
14 years 1 months ago
2007
IEEE
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
DATE
2009
IEEE
14 years 2 months ago
2009
IEEE
—Core-cell stability represents the ability of the core-cell to keep the stored data. With the rapid development of semiconductor memories, their test is becoming a major concern...