172 search results - page 29 / 35 » FinFET-based SRAM design |
DAC
2002
ACM
14 years 8 months ago
2002
ACM
In this paper we propose a novel integrated circuit and architectural level technique to reduce leakage power consumption in high performance cache memories using single Vt (trans...
ISLPED
2004
ACM
14 years 27 days ago
2004
ACM
We present a novel temperature/leakage sensor, developed for high-speed, low-power, monitoring of processors and complex VLSI chips. The innovative idea is the use of 4T SRAM cell...
MICRO
2007
IEEE
14 years 1 months ago
2007
IEEE
Process variations will greatly impact the stability, leakage power consumption, and performance of future microprocessors. These variations are especially detrimental to 6T SRAM ...
DAC
2007
ACM
14 years 8 months ago
2007
ACM
Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology. This paper presents an efficient technique to characte...
DAC
2006
ACM
14 years 8 months ago
2006
ACM
Modern integrated circuits require careful attention to the soft-error rate (SER) resulting from bit upsets, which are normally caused by alpha particle or neutron hits. These eve...