Abstract: With the increasing complexity of memory behavior, attempts are being made to come up with a methodical approach that employs electrical simulation to tackle the memory t...
Zaid Al-Ars, Said Hamdioui, Georg Mueller, A. J. v...
Abstract: DRAMs play an important role in the semiconductor industry, due to their highly dense layout and their low price per bit. This paper presents the first framework of faul...
Abstract: The high complexity of the faulty behavior observed in DRAMs is caused primarily by the presence of internal floating nodes in defective DRAMs. This paper describes a ne...
Abstract: As a result of variations in the fabrication process, different memory components are produced with different operational characteristics, a situation that complicates th...
: It has always been assumed that fault models in memories are sufficiently precise for specifying the faulty behavior. This means that, given a fault model, it should be possible...