The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in CMOS circuits as threshold voltage, channel length, and gate oxide thickne...
Amit Agarwal, Chris H. Kim, Saibal Mukhopadhyay, K...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption a...
Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power diss...
Mohab Anis, Mohamed Mahmoud, Mohamed I. Elmasry, S...
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Transistor leakage is poised to become the dominant source of power dissipation in digital systems, and reconfigurable devices are not immune to this problem. Modern FPGAs already...