129 search results - page 13 / 26 » Process Variations and their Impact on Circuit Operation |
DATE
2009
IEEE
14 years 2 months ago
2009
IEEE
Abstract—This work proposes reliability aware through silicon via (TSV) planning for the 3D stacked silicon integrated circuits (ICs). The 3D power distribution network is modele...
JCP
2008
13 years 7 months ago
2008
Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a criti...
GLVLSI
2010
IEEE
14 years 3 days ago
2010
IEEE
Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high Ion/Ioff, and potential for l...
DATE
2002
IEEE
14 years 9 days ago
2002
IEEE
In this paper, a method for nominal design of analog integrated circuits is presented that includes process variations and operating ranges by worst-case parameter sets. These set...
DAC
2008
ACM
13 years 9 months ago
2008
ACM
Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale proc...