The purpose of the paper is to introduce a new failure rate-based methodology for reliability simulation of deep submicron CMOS integrated circuits. Firstly, two of the state-of-t...
Xiaojun Li, Bing Huang, J. Qin, X. Zhang, Michael ...
As VLSI technology scales toward 65nm and beyond, both timing and power performance of integrated circuits are increasingly affected by process variations. In practice, people oft...
Substantial increase in leakage current and threshold voltage fluctuations are making design of robust wide fan-in dynamic gates a challenging task. Traditionally, a PMOS keeper t...
Hamed F. Dadgour, Rajiv V. Joshi, Kaustav Banerjee
Standard cells are fundamental circuit building blocks designed at very early design stages. Nanometer standard cells are prone to lithography proximity and process variations. Ho...
Yongchan Ban, Savithri Sundareswaran, David Z. Pan
Integrated circuits with bounded lifetimes can have many business advantages. We give some simple examples of m ods to enforce tunable expiration dates for chips using nanom reliab...