97 search results - page 6 / 20 » SRAM Cell Current in Low Leakage Design |
ISCAS
2003
IEEE
14 years 29 days ago
2003
IEEE
ABSTRACT: An active leakage-injection scheme (ALIS) for lowvoltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a commond...
ISQED
2010
IEEE
13 years 9 months ago
2010
IEEE
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering ...
SOCC
2008
IEEE
14 years 2 months ago
2008
IEEE
— Several design metrics have been used in the past to evaluate the SRAM cell stability. However, most of them fail to provide the exact stability figures as shown in this paper...
DAC
2006
ACM
14 years 8 months ago
2006
ACM
Increasing source voltage (Source-Biasing) is an efficient technique for reducing gate and sub-threshold leakage of SRAM arrays. However, due to process variation, a higher source...
ISQED
2009
IEEE
14 years 2 months ago
2009
IEEE
- Designing a power-gating structure with high performance in the active mode and low leakage and short wakeup time during standby mode is an important and challenging task. This p...