— As technology scales into the sub-90nm domain, manufacturing variations become an increasingly significant portion of circuit delay. As a result, delays must be modeled as sta...
Matthew R. Guthaus, Natesan Venkateswaran, Chandu ...
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
Chips manufactured in 90 nm technology have shown large parametric variations, and a worsening trend is predicted. These parametric variations make circuit optimization difficult ...
Jinjun Xiong, Vladimir Zolotov, Natesan Venkateswa...
Process variation has become a major concern in the design of many nanometer circuits, including interconnect pipelines. This paper develops closed-form models to predict the dela...
In nanometer regime, the effects of variations are having an increasing impact on the delay and power characteristics of devices as well as the yield of the circuit. Statistical t...