29 search results - page 1 / 6 » Trajectory Codes for Flash Memory |
CORR
2010
Springer
13 years 5 months ago
2010
Springer
Abstract--Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the store...
DATE
2007
IEEE
14 years 2 months ago
2007
IEEE
Non-volatile Flash memories are becoming more and more popular in Systems-on-Chip (SoC). Embedded Flash (eFlash) memories are based on the well-known floatinggate transistor conce...
DAC
2009
ACM
14 years 8 months ago
2009
ACM
The use of Flash memories in portable embedded systems is ever increasing. This is because of the multi-level storage capability that makes them excellent candidates for high dens...
ICCD
2003
IEEE
14 years 4 months ago
2003
IEEE
NAND flash memory has become an indispensable component in embedded systems because of its versatile features such as non-volatility, solid-state reliability, low cos,t and high d...
ISCAS
2006
IEEE
14 years 1 months ago
2006
IEEE
This paper presents a multilevel (ML) Flash memory onchip error correction system design based on the concept of trellis coded modulation (TCM). This is motivated by the non-trivi...