Because of the aggressive scaling of integrated circuits and the given limits of atomic scales, circuit designers have to become more and more aware of the arising reliability and...
With aggressive gate oxide scaling, latent defects in the gate oxide manifest as traps that, in time, lead to gate oxide breakdown. Progressive gate oxide breakdown, also referred...
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
Technology scaling, characterized by decreasing feature size, thinning gate oxide, and non-ideal voltage scaling, will become a major hindrance to microprocessor reliability in fu...
Jason A. Blome, Shuguang Feng, Shantanu Gupta, Sco...