Abstract— As the semiconductor technology continues its marching toward the deep sub-micron domain, the strong relation between leakage current and temperature becomes critical i...
Abstract-- Process scaling and higher leakage power have resulted in increased power densities and elevated die temperatures. Due to the interdependence of temperature and leakage ...
Aseem Gupta, Nikil D. Dutt, Fadi J. Kurdahi, Kamal...
— It has been the conventional assumption that, due to the superlinear dependence of leakage power consumption on temperature, and widely varying on-chip temperature profiles, a...
Yongpan Liu, Robert P. Dick, Li Shang, Huazhong Ya...
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...