In this paper we propose a novel integrated circuit and architectural level technique to reduce leakage power consumption in high performance cache memories using single Vt (trans...
SRAM leakage power dominates the total power of low duty-cycle applications, e.g., sensor nodes. Accordingly, leakage power reduction during data-retention in SRAM standby is ofte...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....